elektronische bauelemente sgm3055 6a , 30v , r ds(on) 26 m ? n-channel enhancement mode power mosfet 5-aug-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view 1 2 3 4 a b d l k f g h j e c rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the gm3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sot-89 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? fast switching ? dynamic dv/dt rating ? repetitive avalanche rated ? simple drive requirement marking package information package mpq leader size sot-89 1k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t a = 25c 6 a continuous drain current 3 t a = 70c i d 4.8 a pulsed drain current 1,2 i dm 20 a power dissipation p d 1.2 w linear derating factor 0.016 w / c operating junction & storage temperature t j , t stg -55~150 c thermal resistance rating thermal resistance junction-ambient 3 (max). r ? ja 104 c / w sot-89 millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g - - b 4.05 4.25 h 0.89 1.20 c 2.40 2.60 j 0.35 0.41 d 1.40 1.60 k 0.70 0.80 e 3.00 ref. l 1.50 ref. f 0.40 0.52 3055 ???? ? = date code ? ? g ? ? s d ?? ?
elektronische bauelemente sgm3055 6a , 30v , r ds(on) 26 m ? n-channel enhancement mode power mosfet 5-aug-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250 a breakdown voltage temperature coefficient bv dss / t j - 0.037 - v / c reference to 25c, i d =1ma gate threshold voltage v gs(th) 1 - 3 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - 25 v ds =30v, v gs =0 drain-source leakage current t j =70c i dss - - 250 a v ds =24v, v gs =0 - - 26 v gs =10v, i d =4a static drain-source on-resistance r ds(on) - - 40 m ? v gs =4.5v, i d =3a total gate charge 2 q g - 5.4 - gate-source charge q gs - 1.3 - gate-drain (?miller?) charge q gd - 3.6 - nc i d =4 a v ds =24v v gs =5v turn-on delay time 2 t d(on) - 3.6 - rise time t r - 19.8 - turn-off delay time t d(off) - 13 - fall time t f - 3.2 - ns v dd =15v i d =1a v gs =10v r g =3.3 ? r d =1.9 ? input capacitance c iss - 260 - output capacitance c oss - 144 - reverse transfer capacitance c rss - 13 - pf v gs =0 v ds =30 v f=1.0 mhz source-drain diode forward on voltage 2 v sd - - 1.3 v i s =2a, v gs =0, t j =25c continuous source current( body diode ) i s - - 4 a v d =v g =0, v s =1.3v pulsed source current( body diode ) 1 i sm - - 20 a notes: 1. pulse width limited by safe operating area. 2. pulse width Q 300 s, duty cycle Q 2%.
elektronische bauelemente sgm3055 6a , 30v , r ds(on) 26 m ? n-channel enhancement mode power mosfet 5-aug-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente sgm3055 6a , 30v , r ds(on) 26 m ? n-channel enhancement mode power mosfet 5-aug-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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